IRFR3710ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

53 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Termination :

SMD/SMT

FET Type :

N-Channel

Contact Plating :

Tin

Rise Time :

43ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Power Dissipation-Max :

140W Tc

Number of Elements :

1

Current Rating :

42A

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

2 V

Voltage - Rated DC :

100V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

6.22mm

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

42A

Radiation Hardening :

No

Terminal Form :

Gull wing

Mount :

Surface Mount

Length :

6.1976mm

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

140W

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

220A

Height :

2.52mm

Resistance :

18mOhm

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Published :

2004

Turn On Delay Time :

14 ns

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Recovery Time :

53 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Series :

HEXFET®

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

18m Ω @ 33A, 10V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Number of Terminations :

2

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Junction Temperature (Tj) :

175°C

Dual Supply Voltage :

100V

Transistor Application :

SWITCHING

Lead Free :

Contains Lead, Lead Free

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Fall Time (Typ) :

42 ns

Input Capacitance (Ciss) (Max) @ Vds :

2930pF @ 25V

Number of Channels :

1

Drain to Source Breakdown Voltage :

100V