IRFR3708TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

87W

Turn-Off Delay Time :

17.6 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

SWITCHING

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

61A

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

244A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

50ns

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 15A, 10V

Vgs (Max) :

±12V

Current Rating :

61A

Nominal Vgs :

2 V

Element Configuration :

Single

Width :

6.22mm

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Published :

2004

Height :

2.52mm

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Max Junction Temperature (Tj) :

175°C

Resistance :

12.5mOhm

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

Length :

6.7056mm

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

87W Tc

Drain to Source Breakdown Voltage :

30V

Dual Supply Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Turn On Delay Time :

7.2 ns

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

2417pF @ 15V

JESD-609 Code :

e3

Threshold Voltage :

2V

Fall Time (Typ) :

3.7 ns

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Voltage - Rated DC :

30V

Mount :

Surface Mount

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®