IRFR3708PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Published :

2004

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±12V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

244A

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

213 mJ

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

FET Type :

N-Channel

Surface Mount :

yes

Power Dissipation-Max :

87W Tc

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 15A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2417pF @ 15V

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Series :

HEXFET®

Drain-source On Resistance-Max :

0.0125Ohm

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

30A

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant