IRFR3707ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

30V

Width :

6.22mm

Number of Elements :

1

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 15A, 10V

Pulsed Drain Current-Max (IDM) :

220A

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Lead Free :

Contains Lead, Lead Free

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Resistance :

9.5MOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Voltage - Rated DC :

30V

Fall Time (Typ) :

3.3 ns

Mounting Type :

Surface Mount

Contact Plating :

Tin

Height :

2.26mm

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

1.8V

Length :

6.7056mm

Termination :

SMD/SMT

Published :

2008

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Pins :

3

Element Configuration :

Single

Current Rating :

56A

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Series :

HEXFET®

Vgs (Max) :

±20V

Rise Time :

11ns

Continuous Drain Current (ID) :

56A

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

50W

Turn On Delay Time :

8 ns

Transistor Element Material :

SILICON

Nominal Vgs :

1.8 V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

42 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

50W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

12 ns

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Mount :

Surface Mount

JEDEC-95 Code :

TO-252AA