IRFR3707ZCTRLP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0095Ohm

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

30A

Pulsed Drain Current-Max (IDM) :

220A

Mounting Type :

Surface Mount

Number of Elements :

1

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 15A, 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Power Dissipation-Max :

50W Tc

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

MATTE TIN OVER NICKEL

RoHS Status :

RoHS Compliant

Surface Mount :

yes

Published :

2008

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

42 mJ

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63