IRFR3707

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Terminal Position :

Single

Power Dissipation-Max :

87W Tc

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Published :

2000

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

30A

Packaging :

Tube

Drain-source On Resistance-Max :

0.0095Ohm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

13m Ω @ 15A, 10V

Number of Terminations :

2

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 15V

Transistor Application :

SWITCHING

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Avalanche Energy Rating (Eas) :

42 mJ

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

220A

Case Connection :

DRAIN

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

JEDEC-95 Code :

TO-252AA