IRFR3704ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.73mm

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0084Ohm

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Current Rating :

60A

Lead Free :

Lead Free

Height :

2.26mm

Threshold Voltage :

2.1V

Fall Time (Typ) :

12 ns

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

240A

JESD-609 Code :

e3

Radiation Hardening :

No

Rise Time :

8.9ns

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 10V

Voltage - Rated DC :

20V

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 15A, 10V

Case Connection :

DRAIN

Power Dissipation :

48W

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Contact Plating :

Tin

Turn On Delay Time :

41 ns

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

60A

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Width :

6.22mm

Power Dissipation-Max :

48W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

FET Type :

N-Channel

Published :

2004

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Mounting Type :

Surface Mount

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Recovery Time :

19 ns

Number of Pins :

3

Turn-Off Delay Time :

4.9 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®