IRFR3410TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

39m Ω @ 18A, 10V

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Published :

2004

Vgs (Max) :

±20V

Voltage - Rated DC :

100V

Threshold Voltage :

4V

Power Dissipation :

110W

Series :

HEXFET®

Case Connection :

DRAIN

Width :

6.22mm

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Turn On Delay Time :

12 ns

Fall Time (Typ) :

13 ns

Terminal Form :

Gull wing

FET Type :

N-Channel

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

3W Ta 110W Tc

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

39mOhm

Dual Supply Voltage :

100V

ECCN Code :

EAR99

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Turn-Off Delay Time :

40 ns

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

31A

Element Configuration :

Single

Continuous Drain Current (ID) :

31A

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Length :

6.7056mm

Contact Plating :

Tin

Nominal Vgs :

4 V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.3876mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

27ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Radiation Hardening :

No

JESD-609 Code :

e3