IRFR3303TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

28 ns

Series :

HEXFET®

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

16 ns

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Contact Plating :

Tin

Power Dissipation :

57W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

30V

Resistance :

31mOhm

Drain Current-Max (Abs) (ID) :

20A

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Power Dissipation-Max :

57W Tc

Width :

6.22mm

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Height :

2.3876mm

Turn On Delay Time :

11 ns

Rise Time :

99ns

Lead Free :

Contains Lead, Lead Free

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Number of Pins :

3

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

31m Ω @ 18A, 10V

Current Rating :

33A

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Length :

6.7056mm

Avalanche Energy Rating (Eas) :

95 mJ

Element Configuration :

Single

ECCN Code :

EAR99

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

33A

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ