IRFR3303TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Published :

1997

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

31m Ω @ 18A, 10V

Qualification Status :

Not Qualified

Terminal Position :

Single

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Drain-source On Resistance-Max :

0.031Ohm

Pulsed Drain Current-Max (IDM) :

120A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

57W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Series :

HEXFET®

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

20A

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

95 mJ

Case Connection :

DRAIN