IRFR320TRLPBF
- Mfr.Part #
- IRFR320TRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 3.1A DPAK
- Stock
- 2,477
- In Stock :
- 2,477
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.73mm
- Drain to Source Resistance :
- 1.8Ohm
- Element Configuration :
- Single
- Fall Time (Typ) :
- 13 ns
- Rds On Max :
- 1.8 Ω
- Turn-Off Delay Time :
- 30 ns
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Tc
- Turn On Delay Time :
- 10 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 8 Weeks
- Supplier Device Package :
- D-Pak
- Drain to Source Breakdown Voltage :
- 400V
- Continuous Drain Current (ID) :
- 3.1A
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 6.22mm
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 1.8Ohm @ 1.9A, 10V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 2.5W
- Published :
- 2016
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 42W Tc
- Height :
- 2.39mm
- Resistance :
- 1.8Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Weight :
- 1.437803g
- Rise Time :
- 14ns
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 350pF
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 400V
- Mount :
- Surface Mount
- Datasheets
- IRFR320TRLPBF
N-Channel Tape & Reel (TR) 1.8Ohm @ 1.9A, 10V ±20V 350pF @ 25V 20nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR320TRLPBF Overview
A device's maximal input capacitance is 350pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 400V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.8Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR320TRLPBF Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a 400V drain to source voltage (Vdss)
IRFR320TRLPBF Applications
There are a lot of Vishay Siliconix
IRFR320TRLPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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