IRFR2405PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

55V

Number of Elements :

1

Voltage - Rated DC :

55V

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Element Configuration :

Single

Rise Time :

130ns

Input Capacitance (Ciss) (Max) @ Vds :

2430pF @ 25V

Turn-Off Delay Time :

55 ns

Height :

2.3876mm

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

16m Ω @ 34A, 10V

Contact Plating :

Tin

Series :

HEXFET®

Recovery Time :

93 ns

Current Rating :

56A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Power Dissipation :

110W

Radiation Hardening :

No

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

78 ns

Turn On Delay Time :

15 ns

Power Dissipation-Max :

110W Tc

Number of Pins :

3

Factory Lead Time :

52 Weeks

Lead Free :

Contains Lead, Lead Free

REACH SVHC :

No SVHC

Width :

6.22mm

Operating Temperature :

-55°C~175°C TJ

Length :

6.7056mm

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Published :

2000

Nominal Vgs :

4 V

Continuous Drain Current (ID) :

56A

Vgs(th) (Max) @ Id :

4V @ 250µA

Dual Supply Voltage :

55V