IRFR13N20DTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

REACH SVHC :

No SVHC

Width :

6.22mm

Radiation Hardening :

No

Power Dissipation-Max :

110W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

235m Ω @ 8A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Resistance :

235mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

200V

Height :

2.3876mm

Continuous Drain Current (ID) :

13A

JESD-609 Code :

e3

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Length :

6.7056mm

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

11 ns

Termination :

SMD/SMT

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Rise Time :

27ns

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Factory Lead Time :

14 Weeks

Voltage - Rated DC :

200V

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Lead Free :

Contains Lead, Lead Free

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Recovery Time :

210 ns

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

5.5V

Power Dissipation :

110W

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

200V

Number of Pins :

3

Nominal Vgs :

5.5 V

Mounting Type :

Surface Mount

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

52A

Turn-Off Delay Time :

17 ns

Published :

2000

Number of Elements :

1

Current Rating :

13A

FET Type :

N-Channel