IRFR13N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.235Ohm

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Rds On (Max) @ Id, Vgs :

235m Ω @ 8A, 10V

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

200V

JESD-609 Code :

e3

Vgs (Max) :

±30V

Power Dissipation-Max :

110W Tc

DS Breakdown Voltage-Min :

200V

Case Connection :

DRAIN

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

130 mJ

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Mounting Type :

Surface Mount

Series :

HEXFET®

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

52A

FET Type :

N-Channel

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Drain Current-Max (Abs) (ID) :

13A

Operating Mode :

ENHANCEMENT MODE

Published :

2000