IRFR120ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.19Ohm

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

18 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

35A

Transistor Application :

SWITCHING

Published :

2003

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Rds On (Max) @ Id, Vgs :

190m Ω @ 5.2A, 10V

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

35W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

8.7A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

100V

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Number of Terminations :

2