IRFR120NTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

100V

Element Configuration :

Single

Published :

1998

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Power Dissipation-Max :

48W Tc

Turn-Off Delay Time :

32 ns

Number of Channels :

1

FET Type :

N-Channel

Rds On Max :

210 mΩ

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

210mOhm @ 5.6A, 10V

Max Operating Temperature :

175°C

REACH SVHC :

No SVHC

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

9.4A

Length :

6.7056mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Recovery Time :

150 ns

Max Junction Temperature (Tj) :

175°C

Nominal Vgs :

4 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Turn On Delay Time :

4.5 ns

Fall Time (Typ) :

23 ns

Power Dissipation :

39W

Height :

2.52mm

Voltage - Rated DC :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Resistance :

210mOhm

Current Rating :

9.1A

Width :

6.22mm

Termination :

SMD/SMT

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Contact Plating :

Tin

Threshold Voltage :

4V

Input Capacitance :

330pF

Lead Free :

Lead Free

Supplier Device Package :

D-Pak

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Drain to Source Resistance :

210mOhm

Drain to Source Breakdown Voltage :

100V

Rise Time :

23ns

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Number of Elements :

1

Mount :

Surface Mount

Radiation Hardening :

No