IRFR120
- Mfr.Part #
- IRFR120
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- 8.4A, 100V, 0.27OHM, N-CHANNEL M
- Stock
- 990
- In Stock :
- 990
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2013
- Rds On Max :
- 270 mΩ
- Number of Channels :
- 1
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 6.73mm
- Input Capacitance :
- 360pF
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Rise Time :
- 27ns
- Supplier Device Package :
- D-Pak
- Drain to Source Voltage (Vdss) :
- 100V
- Voltage :
- 100V
- Continuous Drain Current (ID) :
- 7.7A
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 270mOhm @ 4.6A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- Fall Time (Typ) :
- 17 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Current :
- 77A
- Turn On Delay Time :
- 6.8 ns
- Packaging :
- Tube
- Drain to Source Resistance :
- 270mOhm
- Width :
- 6.22mm
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 18 ns
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Max Operating Temperature :
- 150°C
- Height :
- 2.39mm
- Weight :
- 1.437803g
- Datasheets
- IRFR120

N-Channel Tube 270mOhm @ 4.6A, 10V ±20V 360pF @ 25V 16nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR120 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 360pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.7A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18 ns.This device has a drain-to-source resistance of 270mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFR120 Features
a continuous drain current (ID) of 7.7A
the turn-off delay time is 18 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRFR120 Applications
There are a lot of Vishay Siliconix
IRFR120 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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