IRFR1018EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

46 ns

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

88 mJ

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Series :

HEXFET®

Factory Lead Time :

15 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

110W Tc

Number of Terminations :

2

Lead Free :

Lead Free

Published :

2008

FET Type :

N-Channel

ECCN Code :

EAR99

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0084Ohm

Threshold Voltage :

4V

Continuous Drain Current (ID) :

79A

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

56A

Width :

6.22mm

Turn On Delay Time :

13 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Number of Elements :

1

JESD-609 Code :

e3

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Length :

6.7056mm

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Power Dissipation :

110W

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

55 ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 100µA

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

Recovery Time :

39 ns

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Rise Time :

35ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

2.3876mm