IRFR024NTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

55V

Recovery Time :

83 ns

Case Connection :

DRAIN

Radiation Hardening :

No

FET Type :

N-Channel

Fall Time (Typ) :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

68A

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Max Junction Temperature (Tj) :

175°C

Length :

6.7056mm

Rise Time :

34ns

Nominal Vgs :

4 V

Series :

HEXFET®

Number of Terminations :

2

Resistance :

75mOhm

Continuous Drain Current (ID) :

17A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Power Dissipation :

38W

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

55V

Published :

2004

Number of Elements :

1

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Current Rating :

17A

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

4.9 ns

Turn-Off Delay Time :

19 ns

Termination :

SMD/SMT

Drain to Source Breakdown Voltage :

55V

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Element Configuration :

Single

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Width :

6.22mm

Terminal Form :

Gull wing

Lead Free :

Contains Lead, Lead Free

ECCN Code :

EAR99

Height :

2.52mm

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

45W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)