IRFM120ATF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Element Configuration :

Single

Height :

1.7mm

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

REACH SVHC :

No SVHC

Turn-Off Delay Time :

36 ns

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2002

JESD-30 Code :

R-PDSO-G4

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Radiation Hardening :

No

Terminal Form :

Gull wing

Rise Time :

14ns

Drain to Source Breakdown Voltage :

100V

Power Dissipation-Max :

2.4W Ta

Power Dissipation :

2.4W

Package / Case :

TO-261-4, TO-261AA

Fall Time (Typ) :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

2.3A

Turn On Delay Time :

14 ns

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Length :

6.7mm

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Width :

3.7mm

Mount :

Surface Mount

Number of Terminations :

4

Contact Plating :

Tin

Terminal Position :

Dual

Transistor Element Material :

SILICON

Weight :

188mg

Voltage - Rated DC :

100V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

ECCN Code :

EAR99

Resistance :

200mOhm

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.15A, 10V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Current Rating :

2.3A

Case Connection :

DRAIN

Threshold Voltage :

4V

Vgs (Max) :

±20V