IRFM120A

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Position :

Dual

Turn-Off Delay Time :

36 ns

Resistance :

200mOhm

Fall Time (Typ) :

28 ns

Current Rating :

2.3A

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Height :

1.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Terminal Form :

Gull wing

Weight :

188mg

Number of Terminations :

4

Turn On Delay Time :

14 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.15A, 10V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Published :

2002

Power Dissipation :

2.4W

Continuous Drain Current (ID) :

2.3A

Mounting Type :

Surface Mount

Element Configuration :

Single

Mount :

Surface Mount

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

100V

Width :

3.7mm

Voltage - Rated DC :

100V

Number of Pins :

3

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

2.4W Ta

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G4

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

FET Type :

N-Channel

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Rise Time :

14ns

Length :

6.7mm

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V