IPW50R280CE
- Mfr.Part #
- IPW50R280CE
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 14,705
- In Stock :
- 14,705
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-3
- Terminal Position :
- Single
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 13V
- Input Capacitance (Ciss) (Max) @ Vds :
- 773pF @ 100V
- Power Dissipation-Max :
- 92W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 52 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 32.6nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Vgs(th) (Max) @ Id :
- 3.5V @ 350μA
- Series :
- CoolMOS™
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 4.2A, 13V
- FET Feature :
- Super Junction
- Drain-source On Resistance-Max :
- 0.28Ohm
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 40 ns
- Published :
- 2008
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 6.4ns
- Turn On Delay Time :
- 8 ns
- Packaging :
- Tube
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 42.9A
- Continuous Drain Current (ID) :
- 13A
- Max Dual Supply Voltage :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 7.6 ns
- Datasheets
- IPW50R280CE

N-Channel Tube 280m Ω @ 4.2A, 13V ±20V 773pF @ 100V 32.6nC @ 10V TO-247-3
IPW50R280CEFKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 773pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 40 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 42.9A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 500V, it supports the maximal dual supply voltage.By using drive voltage (13V), this device helps reduce its overall power consumption.
IPW50R280CEFKSA1 Features
a continuous drain current (ID) of 13A
the turn-off delay time is 40 ns
based on its rated peak drain current 42.9A.
IPW50R280CEFKSA1 Applications
There are a lot of Infineon Technologies
IPW50R280CEFKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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