IPW50R190CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

190m Ω @ 6.2A, 13V

Turn On Delay Time :

9.5 ns

Number of Pins :

3

RoHS Status :

RoHS Compliant

Package / Case :

TO-247-3

Max Dual Supply Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

47.2nC @ 10V

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Packaging :

Tube

Pbfree Code :

yes

Rise Time :

8.5ns

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 510μA

Vgs (Max) :

±20V

Turn-Off Delay Time :

54 ns

Continuous Drain Current (ID) :

18.5A

Power Dissipation-Max :

127W Tc

Number of Elements :

1

Series :

CoolMOS™

FET Feature :

Super Junction

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1137pF @ 100V

Transistor Element Material :

SILICON

Pin Count :

3

Mounting Type :

Through Hole

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

13V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

7.5 ns

Current - Continuous Drain (Id) @ 25°C :

18.5A Tc

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Number of Terminations :

3

Power Dissipation :

127W

Radiation Hardening :

No

Element Configuration :

Single

Published :

2000

FET Type :

N-Channel