IPU07N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 30A, 10V

Drain-source On Resistance-Max :

0.0101Ohm

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

Single

Number of Elements :

1

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2653pF @ 15V

Avalanche Energy Rating (Eas) :

375 mJ

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Voltage - Rated DC :

25V

JESD-30 Code :

R-PSIP-T3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Pulsed Drain Current-Max (IDM) :

210A

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Vgs(th) (Max) @ Id :

2V @ 40µA

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Power Dissipation-Max :

83W Tc

Published :

2003

Operating Temperature :

-55°C~175°C TJ

Rise Time :

18ns

Current Rating :

30A

Number of Terminations :

3

Continuous Drain Current (ID) :

30A

Reach Compliance Code :

Unknown

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

FET Type :

N-Channel