IPU06N03LZG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Vgs (Max) :

±20V

Polarity/Channel Type :

N-Channel

Terminal Finish :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 40µA

Supplier Device Package :

PG-TO251-3-21

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

COMMERCIAL

JEDEC-95 Code :

TO-251AA

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Series :

OptiMOS™2

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

2783 pF @ 15 V

Manufacturer :

Rochester Electronics LLC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

25 V

Transistor Element Material :

SILICON

Pin Count :

3

Avalanche Energy Rating (Eas) :

225 mJ

Technology :

MOSFET (Metal Oxide)

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

350 A

Operating Temperature :

-55°C ~ 175°C (TJ)

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 5 V

FET Feature :

-

Number of Terminals :

3

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

DS Breakdown Voltage-Min :

25 V

Drain-source On Resistance-Max :

0.0095 Ω

Rds On (Max) @ Id, Vgs :

5.1mOhm @ 30A, 10V

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Power Dissipation (Max) :

83W (Tc)

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Package :

Bulk

Product Status :

Active

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Surface Mount :

No

Number of Elements :

1