IPT65R033G7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

391W Tc

Turn On Delay Time :

20 ns

Current - Continuous Drain (Id) @ 25°C :

69A Tc

Turn-Off Delay Time :

85 ns

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Manufacturer Package Identifier :

PG-HSOF-8

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 400V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 1.44mA

Height :

2.4mm

JESD-609 Code :

e3

Continuous Drain Current (ID) :

69A

Rds On (Max) @ Id, Vgs :

33m Ω @ 28.9A, 10V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Factory Lead Time :

18 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-PowerSFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Power Dissipation :

391W

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Series :

CoolMOS™ C7

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

650V