IPP65R660CFDAAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.66Ohm

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

6A

Pbfree Code :

No

Mount :

Through Hole

Published :

2008

JEDEC-95 Code :

TO-220AB

Power Dissipation :

62.5W

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Max Dual Supply Voltage :

650V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Rise Time :

8ns

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Power Dissipation-Max :

62.5W Tc

Drain Current-Max (Abs) (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

543pF @ 100V

Factory Lead Time :

16 Weeks

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

40 ns

Width :

4.57mm

Series :

Automotive, AEC-Q101, CoolMOS™

FET Type :

N-Channel

Lead Free :

Contains Lead

Length :

10.36mm

Halogen Free :

Halogen Free

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

660m Ω @ 3.2A, 10V

Package / Case :

TO-220-3

Height :

15.95mm

Fall Time (Typ) :

10 ns

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Packaging :

Tube

Transistor Element Material :

SILICON

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED