IPP60R060P7

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

159 mJ

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Rds On (Max) @ Id, Vgs :

60m Ω @ 15.9A, 10V

Surface Mount :

No

Power Dissipation-Max :

164W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Published :

2014

FET Type :

N-Channel

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

2895pF @ 400V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Packaging :

Tube

Series :

CoolMOS™ P7

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Vgs(th) (Max) @ Id :

4V @ 800μA

Pulsed Drain Current-Max (IDM) :

151A

DS Breakdown Voltage-Min :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Drain-source On Resistance-Max :

0.06Ohm