IPP65R660CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101, CoolMOS™

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Max Dual Supply Voltage :

650V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Height :

15.95mm

Number of Terminations :

3

Vgs (Max) :

±20V

Width :

4.57mm

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

660m Ω @ 3.2A, 10V

Factory Lead Time :

16 Weeks

Turn On Delay Time :

9 ns

Drain-source On Resistance-Max :

0.66Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Lead Free :

Contains Lead

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Halogen Free :

Halogen Free

Turn-Off Delay Time :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

543pF @ 100V

Number of Pins :

3

Rise Time :

8ns

Power Dissipation :

62.5W

Power Dissipation-Max :

62.5W Tc

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

10.36mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

6A

JESD-609 Code :

e3

Operating Temperature :

-40°C~150°C TJ

Fall Time (Typ) :

10 ns

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

6A

Pbfree Code :

No

Transistor Element Material :

SILICON