IPP65R310CFDAAKSA1

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Mfr.Part #
IPP65R310CFDAAKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 650V 11.4A TO220-3
Stock
17,438
In Stock :
17,438

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
1110pF @ 100V
Packaging :
Tube
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
7 ns
Terminal Finish :
Tin (Sn)
Factory Lead Time :
16 Weeks
Max Dual Supply Voltage :
650V
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-220-3
Power Dissipation-Max :
104.2W Tc
FET Type :
N-Channel
Additional Feature :
High Reliability
Terminal Position :
Single
JEDEC-95 Code :
TO-220AB
Vgs(th) (Max) @ Id :
4.5V @ 440μA
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Pin Count :
3
Reach Compliance Code :
not_compliant
Turn-Off Delay Time :
45 ns
Rise Time :
7.5ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
11.4A Tc
Operating Temperature :
-40°C~150°C TJ
Rds On (Max) @ Id, Vgs :
310m Ω @ 4.4A, 10V
Pbfree Code :
No
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Halogen Free :
Halogen Free
Avalanche Energy Rating (Eas) :
290 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Contains Lead
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
11.4A
Published :
2008
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±20V
Series :
Automotive, AEC-Q101, CoolMOS™
Turn On Delay Time :
11 ns
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPP65R310CFDAAKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-40°C~150°C TJ, Mounting Type:Through Hole, IPP65R310CFDAAKSA1 pinout, IPP65R310CFDAAKSA1 datasheet PDF, IPP65R310CFDAAKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPP65R310CFDAAKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPP65R310CFDAAKSA1


N-Channel Tube 310m Ω @ 4.4A, 10V ±20V 1110pF @ 100V 41nC @ 10V TO-220-3

IPP65R310CFDAAKSA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1110pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).

IPP65R310CFDAAKSA1 Features


the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11.4A
the turn-off delay time is 45 ns


IPP65R310CFDAAKSA1 Applications


There are a lot of Infineon Technologies
IPP65R310CFDAAKSA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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