IPP60R750E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

FET Type :

N-Channel

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 170μA

Series :

CoolMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

750m Ω @ 2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

48W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.75Ohm

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

72 mJ

JESD-609 Code :

e3

Package / Case :

TO-220-3

Published :

2008

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

15.7A

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

17.2nC @ 10V

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

373pF @ 100V

Factory Lead Time :

12 Weeks

DS Breakdown Voltage-Min :

600V

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Qualification Status :

Not Qualified