IPP60R600P6
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- Mfr.Part #
- IPP60R600P6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 37,957
- In Stock ：
- 37,957
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 11 ns
- Packaging :
- Tube
- Published :
- 2013
- Continuous Drain Current (ID) :
- 7.3A
- Turn-Off Delay Time :
- 33 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A Tc
- Rds On Max :
- 600 mΩ
- Supplier Device Package :
- PG-TO220-3
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 2.4A, 10V
- Package / Case :
- TO-220-3
- Halogen Free :
- Halogen Free
- Fall Time (Typ) :
- 14 ns
- Number of Pins :
- 3
- Input Capacitance :
- 557pF
- Rise Time :
- 7ns
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 200μA
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 557pF @ 100V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Lead Free :
- Lead Free
- Series :
- CoolMOS™ P6
- Power Dissipation-Max :
- 63W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 540mOhm
- Max Dual Supply Voltage :
- 600V
- Datasheets
- IPP60R600P6
N-Channel Tube 600mOhm @ 2.4A, 10V ±20V 557pF @ 100V 12nC @ 10V 600V TO-220-3
IPP60R600P6XKSA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 557pF @ 100V.This device has a continuous drain current (ID) of [7.3A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.MOSFETs have 540mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPP60R600P6XKSA1 Features
a continuous drain current (ID) of 7.3A
the turn-off delay time is 33 ns
single MOSFETs transistor is 540mOhm
a 600V drain to source voltage (Vdss)
IPP60R600P6XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R600P6XKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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