IPP60R600E6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

133 mJ

Published :

2008

Power Dissipation-Max :

63W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Series :

CoolMOS™

FET Type :

N-Channel

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Number of Elements :

1

Factory Lead Time :

14 Weeks

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Pbfree Code :

yes

Number of Terminations :

3

Transistor Application :

SWITCHING

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.6Ohm

Vgs (Max) :

±20V

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

19A

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

3.5V @ 200µA

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3