IPP60R600CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

600 mΩ

Package :

Bulk

Rds On (Max) @ Id, Vgs :

600mOhm @ 3.3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

27 nC @ 10 V

Vgs(th) (Max) @ Id :

3.5V @ 220µA

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

6.1A (Tc)

Continuous Drain Current Id :

6.1

Turn-Off Delay Time :

75 ns

Rise Time :

12 ns

Halogen Free :

Halogen Free

Series :

CoolMOS™

Rds On Max :

600 mΩ

Nominal Vgs :

3 V

Max Operating Temperature :

150 °C

Drain to Source Breakdown Voltage :

600 V

FET Feature :

-

Element Configuration :

Single

Mounting Type :

Through Hole

Power Dissipation :

60 W

Input Capacitance :

550 pF

Drain to Source Voltage (Vdss) :

600 V

Gate to Source Voltage (Vgs) :

20 V

Input Capacitance (Ciss) (Max) @ Vds :

550 pF @ 100 V

Vgs (Max) :

±20V

Product Status :

Active

RoHS :

Compliant

Operating Temperature :

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Continuous Drain Current (ID) :

6.1 A

Channel Type :

N

Power Dissipation (Max) :

60W (Tc)

Turn-On Delay Time :

17 ns

FET Type :

N-Channel

Number of Pins :

3

Technology :

MOSFET (Metal Oxide)

Supplier Device Package :

PG-TO220-3-1

Max Power Dissipation :

60 W

Min Operating Temperature :

-55 °C