IPP60R520C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

512pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 10V

Max Dual Supply Voltage :

600V

Drain-source On Resistance-Max :

0.52Ohm

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

22A

Series :

CoolMOS™

Halogen Free :

Halogen Free

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

520m Ω @ 2.8A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

66W

Turn-Off Delay Time :

85 ns

Qualification Status :

Not Qualified

Mount :

Through Hole

Turn On Delay Time :

13 ns

FET Type :

N-Channel

Packaging :

Tube

Fall Time (Typ) :

14 ns

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Package / Case :

TO-220-3

Published :

2011

Lead Free :

Lead Free

Rise Time :

10ns

Number of Terminations :

3

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

66W Tc

Number of Pins :

3

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

8.1A

Vgs(th) (Max) @ Id :

3.5V @ 230μA