IPP60R280C6XKSA1
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- Mfr.Part #
- IPP60R280C6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IPP60R280 - 600V COOLMOS N-CHANN
- Stock
- 46,303
- In Stock ：
- 46,303
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- CoolMOS™
- Rise Time :
- 11ns
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 430μA
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Fall Time (Typ) :
- 12 ns
- Halogen Free :
- Halogen Free
- Lead Free :
- Lead Free
- Max Dual Supply Voltage :
- 600V
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Continuous Drain Current (ID) :
- 13.8A
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 104W
- Packaging :
- Tube
- Power Dissipation-Max :
- 104W Tc
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 100 ns
- Turn On Delay Time :
- 13 ns
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 40A
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 6.5A, 10V
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 284 mJ
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.28Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 13.8A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Datasheets
- IPP60R280C6XKSA1
N-Channel Tube 280m Ω @ 6.5A, 10V ±20V 950pF @ 100V 43nC @ 10V TO-220-3
IPP60R280C6XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 284 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 950pF @ 100V.This device conducts a continuous drain current (ID) of 13.8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 40A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP60R280C6XKSA1 Features
the avalanche energy rating (Eas) is 284 mJ
a continuous drain current (ID) of 13.8A
the turn-off delay time is 100 ns
based on its rated peak drain current 40A.
IPP60R280C6XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R280C6XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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