IPP60R250CPXK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

600V

Power Dissipation :

104W

Pulsed Drain Current-Max (IDM) :

40A

JEDEC-95 Code :

TO-220AB

Pin Count :

3

JESD-609 Code :

e3

Mount :

Through Hole

Lead Free :

Lead Free

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

17ns

Halogen Free :

Halogen Free

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.25Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2008

Turn On Delay Time :

40 ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Packaging :

Tube

Fall Time (Typ) :

12 ns

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

12A

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

650V

Pbfree Code :

yes

Turn-Off Delay Time :

110 ns

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 100V

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Power Dissipation-Max :

104W Tc

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Number of Elements :

1

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

250m Ω @ 7.8A, 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON