IPN80R2K0P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G3

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 500V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Series :

CoolMOS™ P7

Drain-source On Resistance-Max :

2Ohm

Drain to Source Voltage (Vdss) :

800V

Rds On (Max) @ Id, Vgs :

2 Ω @ 940mA, 10V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 50μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Published :

2014

Package / Case :

TO-261-3

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

800V

ECCN Code :

EAR99

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

6W Tc

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

FET Type :

N-Channel