IPN80R2K4P7

Manufacturer :

Infineon Technologies

Product Category :

Specialized ICs

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 500V

Package / Case :

TO-261-3

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 800mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3.5V @ 40μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Series :

CoolMOS™ P7

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Drain to Source Voltage (Vdss) :

800V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2014

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Power Dissipation-Max :

6.3W Tc

Transistor Application :

SWITCHING