IPI90R1K0C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

20 ns

Product Status :

Obsolete

Current - Continuous Drain (Id) @ 25°C :

5.7A (Tc)

Power Dissipation (Max) :

89W (Tc)

RoHS :

Compliant

Halogen Free :

Halogen Free

Rds On Max :

1 Ω

FET Type :

N-Channel

Dual Supply Voltage :

900 V

Min Operating Temperature :

-55 °C

Drain to Source Breakdown Voltage :

900 V

Input Capacitance :

850 pF

Input Capacitance (Ciss) (Max) @ Vds :

850 pF @ 100 V

REACH SVHC :

No SVHC

Supplier Device Package :

PG-TO262-3

Max Operating Temperature :

150 °C

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Technology :

MOSFET (Metal Oxide)

Turn-Off Delay Time :

400 ns

Continuous Drain Current (ID) :

5.7 A

Vgs (Max) :

±20V

Termination :

Through Hole

Power Dissipation :

89 W

Vgs(th) (Max) @ Id :

3.5V @ 370µA

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

900 V

Package :

Bulk

Series :

CoolMOS™

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20 V

Nominal Vgs :

3 V

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

1Ohm @ 3.3A, 10V

FET Feature :

-

Max Power Dissipation :

89 W

Drain to Source Resistance :

1 Ω

Number of Pins :

3