IPI90N06S4L04AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 25V

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Packaging :

Tube

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2.2V @ 90μA

Continuous Drain Current (ID) :

90A

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Factory Lead Time :

16 Weeks

Pbfree Code :

yes

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Vgs (Max) :

±16V

Reach Compliance Code :

not_compliant

Number of Pins :

3

Transistor Element Material :

SILICON

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

150W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Dual Supply Voltage :

60V

Number of Terminations :

3

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1