IPI072N10N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Elements :

1

Power Dissipation-Max :

150W Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 80A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

ECCN Code :

EAR99

Series :

OptiMOS™ 3

Packaging :

Tube

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

4910pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0072Ohm

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Surface Mount :

No

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

80A

DS Breakdown Voltage-Min :

100V

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Transistor Element Material :

SILICON

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

320A

Avalanche Energy Rating (Eas) :

160 mJ

RoHS Status :

RoHS Compliant