IPI034NE7N3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

100A

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

640 mJ

Vgs(th) (Max) @ Id :

3.8V @ 155μA

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

214W Tc

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain-source On Resistance-Max :

0.0034Ohm

Number of Terminations :

3

Transistor Element Material :

SILICON

Pin Count :

3

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

8130pF @ 37.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 100A, 10V

DS Breakdown Voltage-Min :

75V

Packaging :

Tube

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

FET Type :

N-Channel

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

400A

Reach Compliance Code :

Compliant

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

75V