IPI06N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

225 mJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Lead Free :

Lead Free

FET Type :

N-Channel

Number of Terminations :

3

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Drain-source On Resistance-Max :

0.0099Ohm

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

2653pF @ 15V

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 40µA

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 30A, 10V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

50A

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Power Dissipation-Max :

83W Tc

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

50A

Vgs (Max) :

±20V

Voltage - Rated DC :

25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Single

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

91A