IPI041N12N3G
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- Mfr.Part #
- IPI041N12N3G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- IPI041N12 - 12V-300V N-CHANNEL P
- Stock
- 19,736
- In Stock ：
- 19,736
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 120A
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 4.1m Ω @ 100A, 10V
- Max Dual Supply Voltage :
- 120V
- FET Type :
- N-Channel
- Pin Count :
- 3
- Factory Lead Time :
- 18 Weeks
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 13800pF @ 60V
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Published :
- 2008
- Turn On Delay Time :
- 35 ns
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Rise Time :
- 52ns
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Power Dissipation-Max :
- 300W Tc
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Fall Time (Typ) :
- 21 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 70 ns
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 270μA
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 211nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 480A
- Drain-source On Resistance-Max :
- 0.0041Ohm
- Transistor Application :
- SWITCHING
- Series :
- OptiMOS™
- Datasheets
- IPI041N12N3G
N-Channel Tube 4.1m Ω @ 100A, 10V ±20V 13800pF @ 60V 211nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI041N12N3GAKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 900 mJ.The maximum input capacitance of this device is 13800pF @ 60V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 120A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 480A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 120V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPI041N12N3GAKSA1 Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 70 ns
based on its rated peak drain current 480A.
IPI041N12N3GAKSA1 Applications
There are a lot of Infineon Technologies
IPI041N12N3GAKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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