IPDD60R080G7XTMA1

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Mfr.Part #
IPDD60R080G7XTMA1
Manufacturer
Infineon Technologies
Package / Case
10-PowerSOP Module
Datasheet
Download
Description
MOSFET N-CH 600V 29A HDSOP-10
Stock
26,098
In Stock :
26,098

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
FET Type :
N-Channel
Height :
2.5mm
Drain to Source Breakdown Voltage :
600V
Power Dissipation :
174W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
29A
Series :
CoolMOS™ G7
Rds On (Max) @ Id, Vgs :
80m Ω @ 9.7A, 10V
Turn On Delay Time :
19 ns
Packaging :
Tape and Reel (TR)
Factory Lead Time :
18 Weeks
Vgs(th) (Max) @ Id :
4V @ 490μA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Junction Temperature (Tj) :
150°C
Current - Continuous Drain (Id) @ 25°C :
29A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
1640pF @ 400V
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1
Package / Case :
10-PowerSOP Module
Power Dissipation-Max :
174W Tc
Turn-Off Delay Time :
61 ns
Datasheets
IPDD60R080G7XTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPDD60R080G7XTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Package / Case:10-PowerSOP Module, IPDD60R080G7XTMA1 pinout, IPDD60R080G7XTMA1 datasheet PDF, IPDD60R080G7XTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPDD60R080G7XTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPDD60R080G7XTMA1


N-Channel Tape & Reel (TR) 80m Ω @ 9.7A, 10V ±20V 1640pF @ 400V 42nC @ 10V 10-PowerSOP Module

IPDD60R080G7XTMA1 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1640pF @ 400V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 61 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

IPDD60R080G7XTMA1 Features


a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 61 ns


IPDD60R080G7XTMA1 Applications


There are a lot of Infineon Technologies
IPDD60R080G7XTMA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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