IPD50R950CEAUMA1
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- Mfr.Part #
- IPD50R950CEAUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3
- Datasheet
- Download
- Description
- CONSUMER
- Stock
- 68,827
- In Stock ：
- 68,827
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 2.41mm
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 68 mJ
- Drain to Source Voltage (Vdss) :
- 500V
- Continuous Drain Current (ID) :
- 4.3A
- Turn-Off Delay Time :
- 25 ns
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Rise Time :
- 4.9ns
- Length :
- 6.73mm
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2008
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-252-3
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 7 ns
- Input Capacitance :
- 231pF
- Max Power Dissipation :
- 34W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 500V
- Halogen Free :
- Halogen Free
- Drain to Source Resistance :
- 950mOhm
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 34W
- ECCN Code :
- EAR99
- Rds On Max :
- 950 mΩ
- Factory Lead Time :
- 18 Weeks
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Lead Free :
- Contains Lead, Lead Free
- Width :
- 6.22mm
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- not_compliant
- Max Dual Supply Voltage :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 12.8A
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 19.5 ns
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Datasheets
- IPD50R950CEAUMA1
Tape & Reel (TR) 500V TO-252-3
IPD50R950CEAUMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 68 mJ.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 12.8A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 950mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 500V.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.
IPD50R950CEAUMA1 Features
the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 12.8A.
single MOSFETs transistor is 950mOhm
a 500V drain to source voltage (Vdss)
IPD50R950CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD50R950CEAUMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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