IPD50N04S308ATMA1
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- Mfr.Part #
- IPD50N04S308ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IPD50N04 - 20V-40V N-CHANNEL AUT
- Stock
- 35,338
- In Stock ：
- 35,338
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2007
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 68W Tc
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 16 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2350pF @ 25V
- Fall Time (Typ) :
- 6 ns
- Lead Free :
- Contains Lead
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 200A
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 50A, 10V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 40μA
- Turn On Delay Time :
- 11 ns
- Mount :
- Surface Mount
- Power Dissipation :
- 68W
- Terminal Finish :
- Tin (Sn)
- Series :
- OptiMOS™
- Transistor Element Material :
- SILICON
- Max Dual Supply Voltage :
- 40V
- Factory Lead Time :
- 26 Weeks
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Rise Time :
- 7ns
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 50A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Halogen Free :
- Halogen Free
- Datasheets
- IPD50N04S308ATMA1
N-Channel Tape & Reel (TR) 7.5m Ω @ 50A, 10V ±20V 2350pF @ 25V 35nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N04S308ATMA1 Overview
A device's maximum input capacitance is 2350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 50A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPD50N04S308ATMA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 16 ns
based on its rated peak drain current 200A.
IPD50N04S308ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N04S308ATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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