IPD50R800CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

83 mJ

Drain to Source Resistance :

800mOhm

Max Operating Temperature :

150°C

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

5A

Drain to Source Breakdown Voltage :

550V

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Package / Case :

DPAK

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Max Dual Supply Voltage :

500V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-252

Turn-Off Delay Time :

26 ns

Published :

2008

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

18 Weeks

Halogen Free :

Halogen Free

Min Operating Temperature :

-55°C

Lead Free :

Contains Lead

Rise Time :

5.5ns

Number of Elements :

1

Power Dissipation :

40W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

2

Max Power Dissipation :

40W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

15.9 ns

Transistor Application :

SWITCHING

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

ECCN Code :

EAR99