IPD50R800CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Package / Case :

DPAK

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

550V

Halogen Free :

Halogen Free

Pbfree Code :

yes

JEDEC-95 Code :

TO-252

Number of Elements :

1

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

N-Channel

Fall Time (Typ) :

15.9 ns

Avalanche Energy Rating (Eas) :

83 mJ

Max Dual Supply Voltage :

500V

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

40W

Continuous Drain Current (ID) :

5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance :

800mOhm

Min Operating Temperature :

-55°C

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Power Dissipation :

40W

Mount :

Surface Mount

Lead Free :

Contains Lead

Case Connection :

DRAIN

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

500V

Turn-Off Delay Time :

26 ns

Rise Time :

5.5ns